Triggered indistinguishable single photons with narrow line widths from site-controlled quantum dots

K D Jöns; P Atkinson; M Müller; M Heldmaier; S M Ulrich; O G Schmidt; P Michler

doi:10.1021/nl303668z

Triggered indistinguishable single photons with narrow line widths from site-controlled quantum dots

Nano Lett. 2013 Jan 9;13(1):126-30. doi: 10.1021/nl303668z. Epub 2012 Dec 5.

Authors

K D Jöns¹, P Atkinson, M Müller, M Heldmaier, S M Ulrich, O G Schmidt, P Michler

Affiliation

¹ Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany. [email protected]

PMID: 23198958
DOI: 10.1021/nl303668z

Abstract

In this Letter, we present narrow line width (7 μeV), nearly background-free single-photon emission (g((2))(0) = 0.02) and highly indistinguishable photons (V = 0.73) from site-controlled In(Ga)As/GaAs quantum dots. These excellent properties have been achieved by combining overgrowth on ex situ pit-patterned substrates with vertical stacking of spectrally distinct quantum dot layers. Our study paves the way for large-scale integration of quantum dots into quantum photonic circuits as indistinguishable single-photon sources.