High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

Gunuk Wang; Adam C Lauchner; Jian Lin; Douglas Natelson; Krishna V Palem; James M Tour

doi:10.1002/adma.201302047

High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

Adv Mater. 2013 Sep 14;25(34):4789-93. doi: 10.1002/adma.201302047. Epub 2013 Jul 8.

Authors

Gunuk Wang¹, Adam C Lauchner, Jian Lin, Douglas Natelson, Krishna V Palem, James M Tour

Affiliation

¹ Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA; Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA.

PMID: 23836363
DOI: 10.1002/adma.201302047

Abstract

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

Keywords: non-volatile memory; one diode-one resistor; silicon oxides.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.