Electric-field-dependent spin polarization in GdN spin filter tunnel junctions

Avradeep Pal; K Senapati; Z H Barber; M G Blamire

doi:10.1002/adma.201300636

Electric-field-dependent spin polarization in GdN spin filter tunnel junctions

Adv Mater. 2013 Oct 18;25(39):5581-5. doi: 10.1002/adma.201300636. Epub 2013 Jul 29.

Authors

Avradeep Pal¹, K Senapati, Z H Barber, M G Blamire

Affiliation

¹ Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.

PMID: 23893892
DOI: 10.1002/adma.201300636

Abstract

Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes.

Keywords: GdN; Spin filter; magneto-electric effects; tunnel junctions.

Publication types

Research Support, Non-U.S. Gov't