Selective-area van der Waals epitaxy of topological insulator grid nanostructures for broadband transparent flexible electrodes

Yunfan Guo; Mahaya Aisijiang; Kai Zhang; Wei Jiang; Yulin Chen; Wenshan Zheng; Zehao Song; Jie Cao; Zhongfan Liu; Hailin Peng

doi:10.1002/adma.201302661

Selective-area van der Waals epitaxy of topological insulator grid nanostructures for broadband transparent flexible electrodes

Adv Mater. 2013 Nov 6;25(41):5959-64. doi: 10.1002/adma.201302661. Epub 2013 Aug 16.

Authors

Yunfan Guo¹, Mahaya Aisijiang, Kai Zhang, Wei Jiang, Yulin Chen, Wenshan Zheng, Zehao Song, Jie Cao, Zhongfan Liu, Hailin Peng

Affiliation

¹ Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.

PMID: 24038418
DOI: 10.1002/adma.201302661

Abstract

Broadband transparent electrodes based on a two-dimensional grid of topological insulator Bi2Se3 are synthesized by a facile selective-area van der Waals epitaxy method. These two-dimensional grid electrodes exhibit high uniformity over large area, outstanding mechanical durability, and excellent chemical resistance to environmental perturbations. Remarkably, the topological grid electrode has high transmittance of more than 85% from the visible to the near-infrared region.

Keywords: selective-area van der Waals epitaxy; topological insulator; transparent flexible electrode; two-dimensional materials.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Aluminum Silicates / chemistry
Bismuth / chemistry
Electrodes
Mechanical Phenomena*
Nanostructures / chemistry*

Substances

Aluminum Silicates
Bismuth
mica