Room temperature magnetic graphene oxide-iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

Small. 2014 May 28;10(10):1945-52. doi: 10.1002/smll.201302986. Epub 2014 Feb 28.

Authors

Aigu L Lin¹, Haiyang Peng, Zhiqi Liu, Tom Wu, Chenliang Su, Kian Ping Loh, Ariando, Wei Chen, Andrew T S Wee

Affiliation

¹ NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore, 117456; Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore, 117542.

PMID: 24578292
DOI: 10.1002/smll.201302986

No abstract available

Keywords: MRAM; highly disordered system; magnetic graphene oxides; organic spintronics; variable range hopping.

Publication types

Research Support, Non-U.S. Gov't