The electron density was measured at various bias voltages to understand how the plasma grid bias affects the electron near the plasma grid in large-scaled negative ion sources. It was found that the response of the electron to the bias voltage changes depending on negative ion production processes. The electron density remarkably decreases with increasing the bias voltage in the pure-volume plasma. On the other hand, the electron density depends on the bias voltage weakly in the Cs-seeded plasma. In addition, it was observed that the response of the co-extracted electron current to the bias voltage has similar trend to that of the electron density.