Surface-grafted semiconductor layer prepared by surface initiated ring-opening polymerization of L-lysine NCA derivatives

Asymmetric and symmetric L-lysine N-carboxylic anhydrides based on perylene bisimide derivatives were successfully synthesized and grafted onto silicon wafers via surface-initiated ring-opening polymerization. The grafted n-type semiconductor film was flat and compact, and its thickness could be tuned by variation of the polymerization conditions.