Arc-melting to narrow the bandgap of oxide semiconductors

Gang Ou; Dongke Li; Wei Pan; Qinghua Zhang; Ben Xu; Lin Gu; Cewen Nan; Hui Wu

doi:10.1002/adma.201405763

Arc-melting to narrow the bandgap of oxide semiconductors

Adv Mater. 2015 Apr 24;27(16):2589-94. doi: 10.1002/adma.201405763. Epub 2015 Mar 10.

Authors

Gang Ou¹, Dongke Li, Wei Pan, Qinghua Zhang, Ben Xu, Lin Gu, Cewen Nan, Hui Wu

Affiliation

¹ State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.

PMID: 25757453
DOI: 10.1002/adma.201405763

Abstract

The bandgap of a series of oxide semiconductors is narrowed by a quick and facile arc-melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc-melted ZnO under visible light.

Keywords: bandgap engineering; defect chemistry; inorganic semiconductors; photocatalysts.