Alternative Spectral Photoresponse in a p-Cu2ZnSnS4/n-GaN Heterojunction Photodiode by Modulating Applied Voltage

Gang Yang; Yong-Feng Li; Bin Yao; Zhan-Hui Ding; Rui Deng; Xuan Fang; Zhi-Peng Wei

doi:10.1021/acsami.5b04287

Alternative Spectral Photoresponse in a p-Cu2ZnSnS4/n-GaN Heterojunction Photodiode by Modulating Applied Voltage

ACS Appl Mater Interfaces. 2015 Aug 5;7(30):16653-8. doi: 10.1021/acsami.5b04287. Epub 2015 Jul 24.

Authors

Gang Yang¹, Yong-Feng Li^{1

2}, Bin Yao^{1

2}, Zhan-Hui Ding¹, Rui Deng³, Xuan Fang⁴, Zhi-Peng Wei⁴

Affiliations

¹ †State Key Lab of Superhard Materials and College of Physics, Jilin University, Changchun 130012, People's Republic of China.
² ‡Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China.
³ §School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
⁴ ∥State Key Laboratory on High-Power Semiconductor Lasers, Changchun University of Science and Technology, 7186 Wei-Xing Road, Changchun 130022, China.

PMID: 26182428
DOI: 10.1021/acsami.5b04287

Abstract

We report alternative visible and ultraviolet light response spectra in a p-Cu2ZnSnS4 (p-CZTS)/n-GaN heterojunction photodiode. A CZTS film was deposited on an n-GaN/sapphire substrate using a magnetron sputtering method. Current-voltage characteristic of the p-CZTS/n-GaN heterojunction photodiode showed a good rectifying behavior. The spectral response measurements indicate that the response wavelength of the photodiode can be tuned from ultraviolet to visible regions via applying zero and reverse bias. A band alignment at the interface of the p-CZTS/n-GaN heterojunction was proposed to interpret the spectral response of the device.

Keywords: Cu2ZnSnS4; GaN; heterojunction; magnetron sputtering; photodiode.

Publication types

Research Support, Non-U.S. Gov't