Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors

Yen-Fu Lin; Yong Xu; Che-Yi Lin; Yuen-Wuu Suen; Mahito Yamamoto; Shu Nakaharai; Keiji Ueno; Kazuhito Tsukagoshi

doi:10.1002/adma.201502677

Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors

Adv Mater. 2015 Nov;27(42):6612-9. doi: 10.1002/adma.201502677. Epub 2015 Sep 28.

Authors

Yen-Fu Lin¹, Yong Xu², Che-Yi Lin¹, Yuen-Wuu Suen¹, Mahito Yamamoto³, Shu Nakaharai³, Keiji Ueno⁴, Kazuhito Tsukagoshi³

Affiliations

¹ Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
² Department of Energy and Materials Engineering, Dongguk University, Seoul, 100-715, Korea.
³ WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
⁴ Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan.

PMID: 26414685
DOI: 10.1002/adma.201502677

Abstract

Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.

Keywords: MoTe2; low-frequency noise; nanoscale electronics; random telegraph signals; transition metal dichalcogenides.