Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po-Hsun Ho; Chun-Hsiang Chen; Fu-Yu Shih; Yih-Ren Chang; Shao-Sian Li; Wei-Hua Wang; Min-Chuan Shih; Wei-Ting Chen; Ya-Ping Chiu; Min-Ken Li; Yi-Siang Shih; Chun-Wei Chen

doi:10.1002/adma.201503592

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Adv Mater. 2015 Dec 16;27(47):7809-15. doi: 10.1002/adma.201503592. Epub 2015 Oct 28.

Authors

Po-Hsun Ho¹, Chun-Hsiang Chen^{2

3}, Fu-Yu Shih^{4

5}, Yih-Ren Chang¹, Shao-Sian Li¹, Wei-Hua Wang⁵, Min-Chuan Shih³, Wei-Ting Chen³, Ya-Ping Chiu², Min-Ken Li¹, Yi-Siang Shih^{1

4}, Chun-Wei Chen^{1

6}

Affiliations

¹ Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan.
² Department of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.
³ Department of Physics, National Sun Yat-sen University, Kaohsiung, 804, Taiwan.
⁴ Department of Physics, National Taiwan University, Taipei, 106, Taiwan.
⁵ Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 106, Taiwan.
⁶ Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei, 106, Taiwan.

PMID: 26509339
DOI: 10.1002/adma.201503592

Abstract

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

Keywords: band gap opening; charge transfer; graphene heterostructures; ultrastrong photoinduced doping.