Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature

Dong Li; Wanchao Zheng; Dongxing Zheng; Junlu Gong; Liyan Wang; Chao Jin; Peng Li; Haili Bai

doi:10.1021/acsami.5b11265

Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature

ACS Appl Mater Interfaces. 2016 Feb 17;8(6):3977-84. doi: 10.1021/acsami.5b11265. Epub 2016 Feb 4.

Authors

Dong Li¹, Wanchao Zheng¹, Dongxing Zheng¹, Junlu Gong¹, Liyan Wang¹, Chao Jin¹, Peng Li¹, Haili Bai¹

Affiliation

¹ Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.

PMID: 26812349
DOI: 10.1021/acsami.5b11265

Abstract

Electric field induced reversible switchings of the magnetization and resistance were achieved at room temperature in epitaxial Mn:ZnO(110)/BiFeO3(001) heterostructures. The observed modulation of magnetic moment is ∼500% accompanying with a coercive field varying from 43 to 300 Oe and a resistive switching ratio up to ∼10(4)% with the applied voltages of ±4 V. The switching mechanisms in magnetization and resistance are attributed to the ferroelectric polarization reversal of the BiFeO3 layer under applied electric fields, combined with the reversible change of oxygen vacancy concentration at the Mn:ZnO/BiFeO3 interface.

Keywords: bismuth ferrite; magnetization reversal; magnetoelectric coupling effect; multiferroic heterosutructures; zinc oxide films.

Publication types

Research Support, Non-U.S. Gov't