Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudospin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak antilocalization in highly n-doped monolayer MoS_{2}. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. At low temperatures and high carrier densities, the spin lifetime is inversely proportional to momentum relaxation time; this indicates that spin relaxation occurs via a Dyakonov-Perel mechanism.