Oriented Growth of Pb1- x Snx Te Nanowire Arrays for Integration of Flexible Infrared Detectors

Qisheng Wang; Jie Li; Yin Lei; Yao Wen; Zhenxing Wang; Xueying Zhan; Feng Wang; Fengmei Wang; Yun Huang; Kai Xu; Jun He

doi:10.1002/adma.201506338

Oriented Growth of Pb1- x Snx Te Nanowire Arrays for Integration of Flexible Infrared Detectors

Adv Mater. 2016 May;28(18):3596-601. doi: 10.1002/adma.201506338. Epub 2016 Mar 15.

Authors

Qisheng Wang¹, Jie Li¹, Yin Lei¹, Yao Wen¹, Zhenxing Wang¹, Xueying Zhan¹, Feng Wang¹, Fengmei Wang¹, Yun Huang¹, Kai Xu¹, Jun He¹

Affiliation

¹ CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.

PMID: 26990637
DOI: 10.1002/adma.201506338

Abstract

Assembling nanowires into highly ordered arrays is crucial for developing integration circuits. Oriented growth of mid-infrared Pb1- x Snx Te nanowire arrays on bendable mica, extending the function of existing nanowire arrays, is reported. The flexible photodetectors of these nanowire arrays show a high photoresponsivity of 276 A W(-1) (at 800 nm), which is higher than many previously reported infrared nanosensors.

Keywords: Pb1−xSnxTe nanowire arrays; flexible infrared detectors; guided growth; integrated devices systems.

Publication types

Research Support, Non-U.S. Gov't