Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering

Kai Xu; Yun Huang; Bo Chen; Yang Xia; Wen Lei; Zhenxing Wang; Qisheng Wang; Feng Wang; Lei Yin; Jun He

doi:10.1002/smll.201600521

Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering

Small. 2016 Jun;12(23):3106-11. doi: 10.1002/smll.201600521. Epub 2016 Apr 27.

Authors

Kai Xu¹, Yun Huang¹, Bo Chen², Yang Xia², Wen Lei³, Zhenxing Wang¹, Qisheng Wang¹, Feng Wang¹, Lei Yin¹, Jun He¹

Affiliations

¹ CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
² Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China.
³ School of Electrical, Electronic and Computer EngineeringThe University of Western Australia, 35 Stirling Highway, Crawley, WA, 6009, Australia.

PMID: 27120487
DOI: 10.1002/smll.201600521

Abstract

Top-gate HfS2 field-effect transistors (FETs) with 5 nm HfO2 as dielectrics are successfully demonstrated, with on/off ratio of 10(5) and subthreshold swing of 95 mV dec(-1) . Moreover, due to the self-functionalization of HfS2 , uniform and ultrathin HfO2 film free of pinhole-like defects could be deposited on HfS2 , which is dramatically different from other transition metal dichalcogenide FETs.

Keywords: HfO2; HfS2; field-effect transistors; interface engineering.