High-Performance Phototransistor of Epitaxial PbS Nanoplate-Graphene Heterostructure with Edge Contact

Qisheng Wang; Yao Wen; Peng He; Lei Yin; Zhenxing Wang; Feng Wang; Kai Xu; Yun Huang; Fengmei Wang; Chao Jiang; Jun He

doi:10.1002/adma.201601071

High-Performance Phototransistor of Epitaxial PbS Nanoplate-Graphene Heterostructure with Edge Contact

Adv Mater. 2016 Aug;28(30):6497-503. doi: 10.1002/adma.201601071. Epub 2016 May 11.

Authors

Qisheng Wang^{1

2}, Yao Wen¹, Peng He³, Lei Yin¹, Zhenxing Wang¹, Feng Wang¹, Kai Xu¹, Yun Huang¹, Fengmei Wang¹, Chao Jiang¹, Jun He¹

Affiliations

¹ CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
² Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore.
³ State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China.

PMID: 27167005
DOI: 10.1002/adma.201601071

Abstract

Fast infrared response (rising time = 24 ms) and ultrahigh photoconductive gain (10(8) ) are obtained in epitaxial PbS-nanoplate-graphene heterostructures. Combining density functional theory with experiments, this study finds single-crystalline PbS nanoplates are covalently bound to the grapheme edge with strong chemical hybridization, which offers a fast carrier transmission path.

Keywords: PbS nanoplate-graphene heterostructures; chemical hybridization; edge contacts; phototransistors.