Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Jaeho Choi; Sunghak Park; Joohee Lee; Kootak Hong; Do-Hong Kim; Cheon Woo Moon; Gyeong Do Park; Junmin Suh; Jinyeon Hwang; Soo Young Kim; Hyun Suk Jung; Nam-Gyu Park; Seungwu Han; Ki Tae Nam; Ho Won Jang

doi:10.1002/adma.201600859

Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Adv Mater. 2016 Aug;28(31):6562-7. doi: 10.1002/adma.201600859. Epub 2016 May 18.

Authors

Affiliations

¹ Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
² School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul, 06974, Republic of Korea.
³ School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
⁴ School of Chemical Engineering and Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

PMID: 27192161
DOI: 10.1002/adma.201600859

Abstract

Organolead halide perovskites are used for low-operating-voltage multilevel resistive switching. Ag/CH3 NH3 PbI3 /Pt cells exhibit electroforming-free resistive switching at an electric field of 3.25 × 10(3) V cm(-1) for four distinguishable ON-state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low-electric-field resistive switching via filament formation and annihilation.

Keywords: conducting filament; ion migration; low operation voltages; multilevel resistive switching; organolead halide perovskites.