High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma Treatment

Jaewoo Shim; Aely Oh; Dong-Ho Kang; Seyong Oh; Sung Kyu Jang; Jaeho Jeon; Min Hwan Jeon; Minwoo Kim; Changhwan Choi; Jaehyeong Lee; Sungjoo Lee; Geun Young Yeom; Young Jae Song; Jin-Hong Park

doi:10.1002/adma.201601002

High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma Treatment

Adv Mater. 2016 Aug;28(32):6985-92. doi: 10.1002/adma.201601002. Epub 2016 May 20.

Authors

Affiliations

¹ School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
² SKKU Advanced Institute of Nanotechnology, Ungkyunkwan University, Suwon, 440-746, South Korea.
³ Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, South Korea.

PMID: 27206245
DOI: 10.1002/adma.201601002

Abstract

A high-performance ReS2 -based thin-film transistor and photodetector with high on/off-current ratio (10(4) ), high mobility (7.6 cm(2) V(-1) s(-1) ), high photoresponsivity (2.5 × 10(7) A W(-1) ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.

Keywords: O2 plasma; ReS2; photodetectors; thin-film transistors.