Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls

Linze Li; Jason Britson; Jacob R Jokisaari; Yi Zhang; Carolina Adamo; Alexander Melville; Darrell G Schlom; Long-Qing Chen; Xiaoqing Pan

doi:10.1002/adma.201600160

Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls

Adv Mater. 2016 Aug;28(31):6574-80. doi: 10.1002/adma.201600160. Epub 2016 May 23.

Authors

Linze Li^{1

2}, Jason Britson³, Jacob R Jokisaari^{1

2}, Yi Zhang^{1

2}, Carolina Adamo⁴, Alexander Melville⁴, Darrell G Schlom^{4

5}, Long-Qing Chen³, Xiaoqing Pan¹

Affiliations

¹ Department of Chemical Engineering and Materials Science and Department of Physics and Astronomy, University of California - Irvine, Irvine, CA, 92697, USA.
² Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA.
³ Department of Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA.
⁴ Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA.
⁵ Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA.

PMID: 27213756
DOI: 10.1002/adma.201600160

Abstract

Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and erasing stable, nanoscale, strongly charged domain walls using an in situ transmission electron microscopy technique. The resistance can be read nondestructively and presents the largest off/on ratio (≈10(5) ) ever reported in room-temperature ferroelectric devices, opening new avenues for engineering ferroelectric thin-film devices.

Keywords: charged domain walls; ferroelectrics; in situ transmission electron microscopy; resistive switching.