Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

Ajuan Cui; Zhe Liu; Huanli Dong; Fangxu Yang; Yonggang Zhen; Wuxia Li; Junjie Li; Changzhi Gu; Xiaotao Zhang; Rongjin Li; Wenping Hu

doi:10.1002/adma.201603124

Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

Adv Mater. 2016 Oct;28(37):8227-8233. doi: 10.1002/adma.201603124. Epub 2016 Jul 20.

Authors

Ajuan Cui¹, Zhe Liu², Huanli Dong³, Fangxu Yang¹, Yonggang Zhen¹, Wuxia Li², Junjie Li², Changzhi Gu², Xiaotao Zhang⁴, Rongjin Li⁴, Wenping Hu^{5

6}

Affiliations

¹ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
² Beijing National Laboratory for Condensed Matter Physics, Collaborative Innovation Center of Quantum Matter, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
³ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. [email protected].
⁴ Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China.
⁵ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. [email protected].
⁶ Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China. [email protected].

PMID: 27435803
DOI: 10.1002/adma.201603124

Abstract

Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.

Keywords: nanofabrication; nanogap electrodes; nonvolatile resistive switches.