Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials

Dazhen Huang; Chao Wang; Ye Zou; Xingxing Shen; Yaping Zang; Hongguang Shen; Xike Gao; Yuanping Yi; Wei Xu; Chong-An Di; Daoben Zhu

doi:10.1002/anie.201604478

Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials

Angew Chem Int Ed Engl. 2016 Aug 26;55(36):10672-5. doi: 10.1002/anie.201604478. Epub 2016 Aug 5.

Authors

Dazhen Huang^{1

2}, Chao Wang^{1

2}, Ye Zou¹, Xingxing Shen^{1

2}, Yaping Zang^{1

2}, Hongguang Shen^{1

2}, Xike Gao³, Yuanping Yi¹, Wei Xu¹, Chong-An Di⁴, Daoben Zhu⁵

Affiliations

¹ Department Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
² University of Chinese Academy of Sciences, Beijing, 100049, China.
³ Key Laboratory of Synthetic and Self-Assembly Chemistry for Organic Functional Molecules, Shanghai Institute of Organic Chemistry, CAS, Shanghai, 200032, China.
⁴ Department Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China. [email protected].
⁵ Department Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China. [email protected].

PMID: 27496293
DOI: 10.1002/anie.201604478

Abstract

Development of chemically doped high performance n-type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n-type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3 S cm(-1) and a Seebeck coefficient of 585 μV K(-1) . The newly developed TE material possesses a maximum power factor of 113 μW m(-1) K(-2) , which is at the forefront for organic small molecule-based n-type TE materials. These studies reveal that fine-tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.

Keywords: chemical doping; interfacial doping; n-type materials; organic semiconductors; thermoelectrics.

Publication types

Research Support, Non-U.S. Gov't