Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

Zhenwei Wang; Xin He; Xi-Xiang Zhang; Husam N Alshareef

doi:10.1002/adma.201602157

Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS₂

Adv Mater. 2016 Nov;28(41):9133-9141. doi: 10.1002/adma.201602157. Epub 2016 Aug 30.

Authors

Zhenwei Wang¹, Xin He¹, Xi-Xiang Zhang², Husam N Alshareef³

Affiliations

¹ Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
² Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia. [email protected].
³ Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia. [email protected].

PMID: 27571871
DOI: 10.1002/adma.201602157

Abstract

A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS₂ (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10⁴ . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

Keywords: MoS2; SnO; electrostatic force microscopy; gate-tunable; van der Waals heterojunctions.