Large Area Synthesis of 1D-MoSe2 Using Molecular Beam Epitaxy

Sock Mui Poh; Sherman J R Tan; Xiaoxu Zhao; Zhongxin Chen; Ibrahim Abdelwahab; Deyi Fu; Hai Xu; Yang Bao; Wu Zhou; Kian Ping Loh

doi:10.1002/adma.201605641

Large Area Synthesis of 1D-MoSe₂ Using Molecular Beam Epitaxy

Adv Mater. 2017 Mar;29(12). doi: 10.1002/adma.201605641. Epub 2017 Jan 23.

Authors

Sock Mui Poh^{1

2}, Sherman J R Tan^{1

2}, Xiaoxu Zhao^{1

2

3}, Zhongxin Chen^{1

2}, Ibrahim Abdelwahab^{1

2}, Deyi Fu¹, Hai Xu¹, Yang Bao¹, Wu Zhou^{3

4}, Kian Ping Loh^{1

5}

Affiliations

¹ Department of Chemistry, National University of Singapore, Science Drive 3, 117543, Singapore, Singapore.
² NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences #05-01, 28 Medical Drive, 117456, Singapore, Singapore.
³ Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
⁴ School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, China.
⁵ SinBeRISE at CREATE, National Research Foundation, CREATE Tower, 1 Create Way, 138602, Singapore, Singapore.

PMID: 28112835
DOI: 10.1002/adma.201605641

Abstract

Large area synthesis of 1D-MoSe₂ nanoribbons on both insulating and conducting substrates via molecular beam epitaxy is presented. Dimensional controlled growth of 2D, 1D-MoSe₂ , and 1D-2D-MoSe₂ hybrid heterostructure is achieved by tuning the growth temperature or Mo:Se precursor ratio.

Keywords: 1D synthesis; 1D-2D heterostructures; MoSe2; molecular beam epitaxy; transition metal dichalcogenide.