High-Q, Low-Threshold Monolithic Perovskite Thin-Film Vertical-Cavity Lasers

Songtao Chen; Cheng Zhang; Joonhee Lee; Jung Han; Arto Nurmikko

doi:10.1002/adma.201604781

High-Q, Low-Threshold Monolithic Perovskite Thin-Film Vertical-Cavity Lasers

Adv Mater. 2017 Apr;29(16). doi: 10.1002/adma.201604781. Epub 2017 Feb 17.

Authors

Songtao Chen¹, Cheng Zhang², Joonhee Lee¹, Jung Han², Arto Nurmikko³

Affiliations

¹ School of Engineering, Brown University, Providence, RI, 02912, USA.
² Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
³ School of Engineering and Department of Physics, Brown University, Providence, RI, 02912, USA.

PMID: 28211117
DOI: 10.1002/adma.201604781

Abstract

A vertical-cavity surface-emitting perovskite laser is achieved using a microcavity configuration where CH₃ NH₃ PbI₃ thin solid films are embedded within a custom GaN-based high-quality (Q-factor) resonator. This single-mode perovskite laser reaches a low threshold (≈7.6 µJ cm^-2 ) at room temperature and emits spatially coherent Gaussian laser beams. The devices allow direct access to the study of perovskite gain dynamics and material robustness.

Keywords: gain dynamics; nanoporous GaN; perovskites; quasi-steady state; vertical-cavities surface-emitting lasers.