Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Dingyu Ma; Xin Rong; Xiantong Zheng; Weiying Wang; Ping Wang; Tobias Schulz; Martin Albrecht; Sebastian Metzner; Mathias Müller; Olga August; Frank Bertram; Jürgen Christen; Peng Jin; Mo Li; Jian Zhang; Xuelin Yang; Fujun Xu; Zhixin Qin; Weikun Ge; Bo Shen; Xinqiang Wang

doi:10.1038/srep46420

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Sci Rep. 2017 Apr 18:7:46420. doi: 10.1038/srep46420.

Authors

Dingyu Ma^{1

2}, Xin Rong^{1

2}, Xiantong Zheng¹, Weiying Wang¹, Ping Wang^{1

2}, Tobias Schulz³, Martin Albrecht³, Sebastian Metzner⁴, Mathias Müller⁴, Olga August⁴, Frank Bertram⁴, Jürgen Christen⁴, Peng Jin⁵, Mo Li⁶, Jian Zhang⁶, Xuelin Yang¹, Fujun Xu¹, Zhixin Qin¹, Weikun Ge¹, Bo Shen^{1

2}, Xinqiang Wang^{1

2}

Affiliations

¹ State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
² Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
³ Leibniz Institute for Crystal Growth, Berlin 12489, Germany.
⁴ Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitätsplatz 2, Magdeburg 39106, Germany.
⁵ Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Beijing, CAS, 100083, China.
⁶ Microsystem &Terahertz Research Center, 596 Yinhe Road, Shuangliu, Chengdu 610200, China.

Abstract

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) In_xGa_1-xN layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ~220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.

Publication types

Research Support, Non-U.S. Gov't