Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Ting Zhang; Bohan Liu; Waseem Ahmad; Yaoyu Xuan; Xiangxiao Ying; Zhijun Liu; Zhi Chen; Shibin Li

doi:10.1186/s11671-017-2287-2

Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Nanoscale Res Lett. 2017 Sep 4;12(1):522. doi: 10.1186/s11671-017-2287-2.

Authors

Ting Zhang¹, Bohan Liu¹, Waseem Ahmad¹, Yaoyu Xuan¹, Xiangxiao Ying¹, Zhijun Liu¹, Zhi Chen^{1

2

3}, Shibin Li⁴

Affiliations

¹ School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China.
² Department of Electrical and Computer Engineering, University of Kentucky, Lexington, KY, 40506, USA.
³ Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, KY, USA.
⁴ School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China. [email protected].

Abstract

Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n⁺/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 10¹⁴ ions/cm² has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.

Keywords: Hyperdoped silicon; Ion-implantation; NIR photoresponse.