In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure

Qi Guo; Xiaoguang Xu; Fang Wang; Yunhao Lu; Jikun Chen; Yanjun Wu; Kangkang Meng; Yong Wu; Jun Miao; Yong Jiang

doi:10.1088/1361-6528/aab5fb

In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure

Nanotechnology. 2018 Jun 1;29(22):224003. doi: 10.1088/1361-6528/aab5fb. Epub 2018 Mar 12.

Authors

Qi Guo¹, Xiaoguang Xu, Fang Wang, Yunhao Lu, Jikun Chen, Yanjun Wu, Kangkang Meng, Yong Wu, Jun Miao, Yong Jiang

Affiliation

¹ School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.

PMID: 29528849
DOI: 10.1088/1361-6528/aab5fb

Abstract

We report the in-plane electric field controlled ferromagnetism of La_2/3Sr_1/3MnO₃ (LSMO) films epitaxially deposited on [Pb(Mg_1/3Nb_2/3)O₃]_0.7-(PbTiO₃)_0.3 (PMN-PT) (001), (011) and (111) single crystal substrates. The in-plane coercivities (H _c∥) and remanences of the LSMO films greatly depend on the in-plane electric field applied on the PMN-PT (001) and (011) substrates. The experimental change of H _c∥ is consistent with the Stoner-Wohlfarth model and first principle calculation with the electric field varying from -10 to 10 kV cm^-1. Moreover, the Curie temperature and anisotropic magnetoresistance of the LSMO films can also be manipulated by an in-plane electric field. Finally, the LSMO/PMN-PT (001) heterostructure is designed to be a new kind of magnetic signal generator with the source of electric field.