Author Correction: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers emitting at 1.3 µm

C Fuchs; A Brüggemann; M J Weseloh; C Berger; C Möller; S Reinhard; J Hader; J V Moloney; A Bäumner; S W Koch; W Stolz

doi:10.1038/s41598-018-25808-8

Author Correction: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers emitting at 1.3 µm

Sci Rep. 2018 May 15;8(1):7891. doi: 10.1038/s41598-018-25808-8.

Authors

C Fuchs¹, A Brüggemann², M J Weseloh², C Berger², C Möller², S Reinhard², J Hader^{3

4}, J V Moloney^{3

4}, A Bäumner², S W Koch², W Stolz²

Affiliations

¹ Materials Sciences Center and Department of Physics, Philipps-Universität Marburg, Renthof 5, 35032, Marburg, Germany. [email protected].
² Materials Sciences Center and Department of Physics, Philipps-Universität Marburg, Renthof 5, 35032, Marburg, Germany.
³ Nonlinear Control Strategies Inc., 7040 N. Montecatina Dr., Tucson, AZ, 85704, USA.
⁴ College of Optical Sciences, University of Arizona, 1630 E. University Blvd., Tucson, AZ, 85721, USA.

Abstract

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper.

Publication types

Published Erratum