Low Threshold Fabry-Pérot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets

Yangguang Zhong; Qi Wei; Zhen Liu; Qiuyu Shang; Liyun Zhao; Ruiwen Shao; Zhepeng Zhang; Jie Chen; Wenna Du; Chao Shen; Jun Zhang; Yanfeng Zhang; Peng Gao; Guichuan Xing; Xinfeng Liu; Qing Zhang

doi:10.1002/smll.201801938

Low Threshold Fabry-Pérot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets

Small. 2018 Aug;14(35):e1801938. doi: 10.1002/smll.201801938. Epub 2018 Jul 31.

Authors

Yangguang Zhong^{1

2}, Qi Wei^{1

2}, Zhen Liu², Qiuyu Shang^{2

3}, Liyun Zhao², Ruiwen Shao⁴, Zhepeng Zhang^{2

5}, Jie Chen^{2

6}, Wenna Du⁶, Chao Shen^{7

8}, Jun Zhang^{7

8}, Yanfeng Zhang^{2

5}, Peng Gao^{4

9

10}, Guichuan Xing¹¹, Xinfeng Liu⁶, Qing Zhang^{2

3}

Affiliations

¹ Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China.
² Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China.
³ Research Center for Wide Gap Semiconductor, Peking University, Beijing, 100871, China.
⁴ Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China.
⁵ Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
⁶ Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.
⁷ State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
⁸ College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China.
⁹ International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China.
¹⁰ Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.
¹¹ Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, SAR, 999078, China.

PMID: 30066432
DOI: 10.1002/smll.201801938

Abstract

Lead Iodide (PbI₂ ) is a layered semiconductor with direct band gap holding great promises in green light emission and detection devices. Recently, PbI₂ planar lasers are demonstrated using hexagonal whispering-gallery-mode microcavities, but the lasing threshold is quite high. In this work, lasing from vapor phase deposition derived PbI₂ trapezoidal nanoplatelets (NPs) with threshold that is at least an order of magnitude lower than the previous value is reported. The growth mechanism of the trapezoidal NPs is explored and attributed to the synergistic effects of van der Waals interactions and lattice mismatching. The lasing is enabled by the population inversion of n = 1 excitons and the optical feedback is provided by the Fabry-Pérot oscillation between the side facets of trapezoidal NPs. The findings not only advance the understanding of growth and photophysics mechanism of PbI₂ nanostructures but also provide ideas to develop low threshold ultrathin lasers.

Keywords: PbI2; layered semiconductor; microcavity; small laser; van der Waals epitaxy.