Optical and electrical properties of 2D transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. This study demonstrates how grain boundaries, crystal orientation, and strain fields can unambiguously be identified with combined lateral force microscopy and transverse shear microscopy (TSM) for CVD-grown tungsten disulfide (WS2 ) monolayers, on length scales that are relevant for optoelectronic applications. Further, angle-dependent TSM measurements enable the fourth-order elastic constants of monolayer WS2 to be acquired experimentally. The results facilitate high-throughput and nondestructive microstructure visualization of monolayer TMDCs and insights into their elastic properties, thus providing an accessible tool to support the development of advanced optoelectronic devices based on such 2D semiconductors.
Keywords: elastic constants; lateral force microscopy; microstructure; transition metal dichalcogenides; transverse shear microscopy.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.