Investigation of the Energy Band at the Molybdenum Disulfide and ZrO2 Heterojunctions

Xinke Liu; Cong Hu; Kuilong Li; Wenjia Wang; Zhiwen Li; Jinping Ao; Jing Wu; Wei He; Wei Mao; Qiang Liu; Wenjie Yu; Ren-Jei Chung

doi:10.1186/s11671-018-2825-6

Investigation of the Energy Band at the Molybdenum Disulfide and ZrO₂ Heterojunctions

Nanoscale Res Lett. 2018 Dec 17;13(1):405. doi: 10.1186/s11671-018-2825-6.

Authors

Xinke Liu¹, Cong Hu², Kuilong Li³, Wenjia Wang⁴, Zhiwen Li², Jinping Ao², Jing Wu⁵, Wei He⁶, Wei Mao⁷, Qiang Liu⁸, Wenjie Yu⁸, Ren-Jei Chung⁹

Affiliations

¹ College of Materials Science and Engineering, Shenzhen Key Laboratory of Micro-scale Optical Information Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People's Republic of China. [email protected].
² College of Materials Science and Engineering, Shenzhen Key Laboratory of Micro-scale Optical Information Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People's Republic of China.
³ School of Electronic and Information Engineering (Department of Physics), Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, People's Republic of China. [email protected].
⁴ School of Electronic and Information Engineering (Department of Physics), Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, People's Republic of China.
⁵ Institute of Materials research and Engineering (IMRE), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore.
⁶ College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, People's Republic of China.
⁷ The Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Tokyo, 113-0032, Japan.
⁸ State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai, 200050, People's Republic of China.
⁹ Department of Chemical Engineering and Biotechnology, National Taipei University of Technology (Taipei Tech), 10608, Taipei, Taiwan.

Abstract

The energy band alignment at the multilayer-MoS₂/ZrO₂ interface and the effects of CHF₃ plasma treatment on the band offset were explored using x-ray photoelectron spectroscopy. The valence band offset (VBO) and conduction band offset (CBO) for the MoS₂ /ZrO₂ sample is about 1.87 eV and 2.49 eV, respectively. While the VBO was enlarged by about 0.75 eV for the sample with CHF₃ plasma treatment, which is attributed to the up-shift of Zr 3d core level. The calculation results demonstrated that F atoms have strong interactions with Zr atoms, and the valence band energy shift for the d-orbital of Zr atoms is about 0.76 eV, in consistent with the experimental result. This interesting finding encourages the application of ZrO₂ as gate materials in MoS₂-based electronic devices and provides a promising way to adjust the band alignment.

Keywords: CHF3 treatment; Energy band alignment; MoS2/ZrO2; X-ray photoelectron spectroscopy.

Abstract

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