Electrostatic Control of Insulator-Metal Transition in La-doped SrSnO3 Films

Laxman Raju Thoutam; Jin Yue; Abhinav Prakash; Tianqi Wang; Kavinraaj Ella Elangovan; Bharat Jalan

doi:10.1021/acsami.8b22034

Electrostatic Control of Insulator-Metal Transition in La-doped SrSnO₃ Films

ACS Appl Mater Interfaces. 2019 Feb 27;11(8):7666-7670. doi: 10.1021/acsami.8b22034. Epub 2019 Feb 18.

Authors

Laxman Raju Thoutam¹, Jin Yue¹, Abhinav Prakash¹, Tianqi Wang¹, Kavinraaj Ella Elangovan¹, Bharat Jalan¹

Affiliation

¹ Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States.

PMID: 30761892
DOI: 10.1021/acsami.8b22034

Abstract

We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO₃ films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (-4 V ≤ V_g ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO₃ films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.

Keywords: electron−electron interaction; electrostatic gating; hybrid molecular beam epitaxy; insulator−metal transition; ion gel; reversibility; wide bandgap semiconductor.