CsGa(HAsO4)2, the first Ga representative of the RbAl(HAsO4)2 structure type

Karolina Schwendtner; Uwe Kolitsch

doi:10.1107/S2056989019002081

CsGa(HAsO₄)₂, the first Ga representative of the RbAl(HAsO₄)₂ structure type

Acta Crystallogr E Crystallogr Commun. 2019 Feb 8;75(Pt 3):346-349. doi: 10.1107/S2056989019002081. eCollection 2019 Mar 1.

Authors

Karolina Schwendtner¹, Uwe Kolitsch²

Affiliations

¹ Institute for Chemical Technology and Analytics, Division of Structural Chemistry, TU Wien, Getreidemarkt 9/164-SC, 1060 Vienna, Austria.
² Naturhistorisches Museum, Burgring 7, 1010 Vienna, and Institut für Mineralogie und Kristallographie, Universität Wien, Althanstrasse 14, 1090 Wien, Austria.

Abstract

The crystal structure of hydro-thermally synthesized (T = 493 K, 7 d) caesium gallium bis-[hydrogen arsenate(V)], CsGa(HAsO₄)₂, was solved by single-crystal X-ray diffraction. The compound crystallizes in the common RbAl(HAsO₄)₂ structure type (R32) and consists of a basic tetra-hedral-octa-hedral framework topology that houses Cs⁺ cations in its channels. The AsO₄ tetra-hedron is disordered over two positions with site occupancy factors of 0.946 (1) and 0.054 (1). Strong hydrogen bonds strengthen the network. The structure was refined as inversion twin.

Keywords: CsGa(HAsO4)2; arsenate; crystal structure; hydrogen arsenate.

Grants and funding

This work was funded by Austrian Academy of Sciences grant Doc fForte Fellowship to K. Schwendtner.