Ferroelectric field manipulated nonvolatile resistance switching in Al:ZnO/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures at room temperature

Shasha Liu; Chao Jin; Dongxing Zheng; Xin Pang; Yuchen Wang; Ping Wang; Wanchao Zheng; Haili Bai

doi:10.1039/c9cp01809c

Ferroelectric field manipulated nonvolatile resistance switching in Al:ZnO/Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ heterostructures at room temperature

Phys Chem Chem Phys. 2019 May 28;21(20):10784-10790. doi: 10.1039/c9cp01809c. Epub 2019 May 14.

Authors

Shasha Liu¹, Chao Jin¹, Dongxing Zheng¹, Xin Pang¹, Yuchen Wang¹, Ping Wang¹, Wanchao Zheng¹, Haili Bai¹

Affiliation

¹ Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China. [email protected] [email protected].

PMID: 31086927
DOI: 10.1039/c9cp01809c

Abstract

Resistance switching was obtained in Al:ZnO/Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ heterostructures at room temperature by applying an external electric field. The modulation of the resistance is more pronounced in the thinner samples, indicating that it is an interfacial effect. In addition, the resistance of Al:ZnO films is significantly reduced by the photoexcited carriers when illumination is applied. The results indicate that the carrier density in the Al:ZnO films is modulated under external electric fields, due to the accumulation and depletion of charge at the interface between Al:ZnO and Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃. Hence, reversible and nonvolatile resistance states can be achieved by the ferroelectric field effect, and it is expected that multilevel storage will be realized.