Spectral Sensitization of n- and p-Type Gallium Phosphide Single Crystals with Single-Walled Semiconducting Carbon Nanotubes

Kevin J Watkins; Bruce A Parkinson

doi:10.1021/acs.jpclett.9b00694

Spectral Sensitization of n- and p-Type Gallium Phosphide Single Crystals with Single-Walled Semiconducting Carbon Nanotubes

J Phys Chem Lett. 2019 Jul 5;10(13):3604-3609. doi: 10.1021/acs.jpclett.9b00694. Epub 2019 Jun 14.

Authors

Kevin J Watkins¹, Bruce A Parkinson¹

Affiliation

¹ Department of Chemistry and School of Energy Resources , University of Wyoming , Laramie , Wyoming 82071 , United States.

PMID: 31188608
DOI: 10.1021/acs.jpclett.9b00694

Abstract

The spectral sensitization of single-crystal p-GaP by semiconducting single-walled carbon nanotubes (s-SWCNT) via hole injection into the p-GaP valence band is reported. The results are compared to SWNCT sensitized n-type single-crystal substrates: TiO₂, SnO₂, and n-GaP. It was found that the sensitized photocurrents from CoMoCAT and HiPco s-SWCNTs were from a hole injection mechanism on all substrates, even when electron injection into the conduction band should be energetically favored. The results suggest an intrinsic p-type character of the s-SWCNTs surface films investigated in this work.