Tuning the magnetotransport behavior of topological insulator with a transition-metal oxide layer

Liyang Liao; Peng Chen; Xufeng Kou; Feng Pan; Cheng Song

doi:10.1088/1361-648X/ab2f53

Tuning the magnetotransport behavior of topological insulator with a transition-metal oxide layer

J Phys Condens Matter. 2019 Oct 9;31(40):405001. doi: 10.1088/1361-648X/ab2f53. Epub 2019 Jul 4.

Authors

Liyang Liao¹, Peng Chen, Xufeng Kou, Feng Pan, Cheng Song

Affiliation

¹ Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.

PMID: 31272092
DOI: 10.1088/1361-648X/ab2f53

Abstract

The interaction between topological insulator (TI) and its adjacent magnetic layer serves as a basis for exploring the device application of TI. Here we investigate the modulation of the magnetotransport behavior of Bi₂Te₃ TI with a transition-metal oxide layer NiO. It is found that the weak-antilocalization effect is absent at low magnetic fields and the magnetoresistance ratio decreases monotonically with increasing the NiO growth temperature from 300 to 473 K, indicating the suppression of the topological surface states of Bi₂Te₃. Such behaviors are attributed to the decomposition of NiO and the concomitant formation of magnetic impurities at the Bi₂Te₃/NiO interface. Differently, the weak-antilocalization shows no significant weakening with the growth of Cr₂O₃ top layer, due to its better chemical stability. Our observation would be significant for the material selection for the device integration of TI.