Large-Area Synthesis of Superclean Graphene via Selective Etching of Amorphous Carbon with Carbon Dioxide

Angew Chem Int Ed Engl. 2019 Oct 7;58(41):14446-14451. doi: 10.1002/anie.201905672. Epub 2019 Aug 7.

Abstract

Contamination commonly observed on the graphene surface is detrimental to its excellent properties and strongly hinders its application. It is still a great challenge to produce large-area clean graphene film in a low-cost manner. Herein, we demonstrate a facile and scalable chemical vapor deposition approach to synthesize meter-sized samples of superclean graphene with an average cleanness of 99 %, relying on the weak oxidizing ability of CO2 to etch away the intrinsic contamination, i.e., amorphous carbon. Remarkably, the elimination of amorphous carbon enables a significant reduction of polymer residues in the transfer of graphene films and the fabrication of graphene-based devices and promises strongly enhanced electrical and optical properties of graphene. The facile synthesis of large-area superclean graphene would open the pathway for both fundamental research and industrial applications of graphene, where a clean surface is highly needed.

Keywords: carbon dioxide; chemical vapor deposition; graphene; selective etching.