Utilization of the N,C,N-chelating ligand L (L={2,6-(Me2 NCH2 )2 C6 H3 }- ) in the chemistry of 13 group elements provided either N→In coordinated monomeric chalcogenides LIn(μ-E4 ) (E=S, Se) with unprecedented InE4 inorganic ring or monomeric chalcogenolates LM(EPh)2 (M=Ga, In). Complex LGa(SePh)2 was selected as the most suitable single source precursor (SSP) for the deposition of amorphous semiconducting GaSe thin films using spin coating method.
Keywords: GaSe material; amorphous thin films; chalcogenolates; single-source precursor; spin-coating.
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