Atomic, electronic and transport properties of In-Au 2D compound on Si(1 0 0)

D V Gruznev; L V Bondarenko; A Y Tupchaya; V G Kotlyar; O A Utas; A N Mihalyuk; N V Denisov; A V Matetskiy; A V Zotov; A A Saranin

doi:10.1088/1361-648X/ab5f28

Atomic, electronic and transport properties of In-Au 2D compound on Si(1 0 0)

J Phys Condens Matter. 2020 Mar 27;32(13):135003. doi: 10.1088/1361-648X/ab5f28.

Authors

D V Gruznev¹, L V Bondarenko, A Y Tupchaya, V G Kotlyar, O A Utas, A N Mihalyuk, N V Denisov, A V Matetskiy, A V Zotov, A A Saranin

Affiliation

¹ Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok, Russia.

PMID: 31805542
DOI: 10.1088/1361-648X/ab5f28

Abstract

Two-dimensional (In, Au)/Si(1 0 0)c(2 [Formula: see text] 2) compound was synthesized and its atomic arrangement, electron band structure and low-temperature transport properties were characterized using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and four-point-probe resistivity measurements assisted with first-principles density-functional-theory calculations. The present results are compared to those obtained earlier for the parent (Tl, Au)/Si(1 0 0)c(2 [Formula: see text] 2) system.