Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection

Cheng Guo; Yibin Hu; Gang Chen; Dacheng Wei; Libo Zhang; Zhiqingzi Chen; Wanlong Guo; Huang Xu; Chia-Nung Kuo; Chin Shan Lue; Xiangyan Bo; Xiangang Wan; Lin Wang; Antonio Politano; Xiaoshuang Chen; Wei Lu

doi:10.1126/sciadv.abb6500

Anisotropic ultrasensitive PdTe₂-based phototransistor for room-temperature long-wavelength detection

Sci Adv. 2020 Sep 2;6(36):eabb6500. doi: 10.1126/sciadv.abb6500. Print 2020 Sep.

Authors

Cheng Guo^{1

2}, Yibin Hu¹, Gang Chen^{1

2}, Dacheng Wei³, Libo Zhang^{1

4}, Zhiqingzi Chen^{1

2}, Wanlong Guo^{1

5}, Huang Xu^{1

2}, Chia-Nung Kuo⁶, Chin Shan Lue⁶, Xiangyan Bo⁷, Xiangang Wan⁷, Lin Wang^{8

2}, Antonio Politano^{9

10}, Xiaoshuang Chen^{8

2

11}, Wei Lu^{1

2}

Affiliations

¹ State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
² University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing 100049, China.
³ State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.
⁴ Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China.
⁵ School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
⁶ Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan.
⁷ National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China.
⁸ State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China. [email protected] [email protected] [email protected].
⁹ Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, 67100 L'Aquila (AQ), Italy. [email protected] [email protected] [email protected].
¹⁰ CNR-IMM Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121 Catania, Italy.
¹¹ Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, China.

Abstract

Emergent topological Dirac semimetals afford fresh pathways for optoelectronics, although device implementation has been elusive to date. Specifically, palladium ditelluride (PdTe₂) combines the capabilities provided by its peculiar band structure, with topologically protected electronic states, with advantages related to the occurrence of high-mobility charge carriers and ambient stability. Here, we demonstrate large photogalvanic effects with high anisotropy at terahertz frequency in PdTe₂-based devices. A responsivity of 10 A/W and a noise-equivalent power lower than 2 pW/Hz^0.5 are achieved at room temperature, validating the suitability of PdTe₂-based devices for applications in photosensing, polarization-sensitive detection, and large-area fast imaging. Our findings open opportunities for exploring uncooled and sensitive photoelectronic devices based on topological semimetals, especially in the highly pursuit terahertz band.

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