Defect Engineering on Boron Nitride for O₂ Activation and Subsequent Oxidative Desulfurization

The rational design of highly active hexagonal boron nitride (h-BN) catalysts at the atomic level is urgent for aerobic reactions. Herein, a doping impurity atom strategy is adopted to increase its catalytic activities. A series of doping systems involving O, C impurities and B, N antisites are constructed and their catalytic activities for molecular O₂ have been studied by density functional theory (DFT) calculations. It is demonstrated that O₂ is highly activated on O_N and B_N defects, and moderately activated on C_B and C_N defects, however, it is not stable on N_B and O_B defects. The subsequent application in oxidative desulfurization (ODS) reactions proves the O_N and C-doped (C_B , C_N ) systems to be good choice for sulfocompounds oxidization, especially for dibenzothiophene (DBT). While the B_N antisite is not suitable for such aerobic reaction due to the extremely stable B-O^* -B species formed during the oxidation process.