Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

Juhee Jeon; Young-Soo Park; Sola Woo; Doohyeok Lim; Jaemin Son; Sangsig Kim

doi:10.1166/jnn.2021.19401

Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

J Nanosci Nanotechnol. 2021 Aug 1;21(8):4310-4314. doi: 10.1166/jnn.2021.19401.

Authors

Juhee Jeon¹, Young-Soo Park¹, Sola Woo¹, Doohyeok Lim¹, Jaemin Son¹, Sangsig Kim¹

Affiliation

¹ Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

PMID: 33714319
DOI: 10.1166/jnn.2021.19401

Abstract

In this paper, we propose the design optimization of underlapped Si_1-xGe_x-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I-V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si_1-xGe_x source using a commercial device simulator. In particular, a Si_0.2Ge_0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 10¹³, and SS of 27.4 mV/dec.