The emerging CsPbI3 perovskites are highly efficient and thermally stable materials for wide-band gap perovskite solar cells (PSCs), but the doped hole transport materials (HTMs) accelerate the undesirable phase transition of CsPbI3 in ambient. Herein, a dopant-free D-π-A type HTM named CI-TTIN-2F has been developed which overcomes this problem. The suitable optoelectronic properties and energy-level alignment endow CI-TTIN-2F with excellent charge collection properties. Moreover, CI-TTIN-2F provides multisite defect-healing effects on the defective sites of CsPbI3 surface. Inorganic CsPbI3 PSCs with CI-TTIN-2F HTM feature high efficiencies up to 15.9 %, along with 86 % efficiency retention after 1000 h under ambient conditions. Inorganic perovskite solar modules were also fabricated that exhibiting an efficiency of 11.0 % with a record area of 27 cm2 . This work confirms that using efficient dopant-free HTMs is an attractive strategy to stabilize inorganic PSCs for their future scale-up.
Keywords: defect passivation; dopant-free; hole transport materials; inorganic perovskites; perovskite solar cells.
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