Author Correction: Mechanism understanding in cryo atomic layer etching of SiO
2
based upon C
4
F
8
physisorption
Sci Rep
.
2022 Feb 1;12(1):1979.
doi: 10.1038/s41598-022-06291-8.
Authors
G Antoun
1
,
T Tillocher
2
,
P Lefaucheux
2
,
J Faguet
3
,
K Maekawa
3
,
R Dussart
4
Affiliations
1
GREMI, Orléans University-CNRS, 14 Rue d'Issoudun, BP 6744, 45067, Orléans, France.
[email protected]
.
2
GREMI, Orléans University-CNRS, 14 Rue d'Issoudun, BP 6744, 45067, Orléans, France.
3
TEL Technology Center, America, LLC, NanoFab 300 South 255 Fuller Rd., Suite 214, Albany, NY, USA.
4
GREMI, Orléans University-CNRS, 14 Rue d'Issoudun, BP 6744, 45067, Orléans, France.
[email protected]
.
PMID:
35105938
PMCID:
PMC8807615
DOI:
10.1038/s41598-022-06291-8
No abstract available
Publication types
Published Erratum