Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate

Jiahui Hu; Feng Wu; Jiangnan Dai; Changqing Chen

doi:10.1007/s12200-021-1216-2

Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate

Front Optoelectron. 2021 Dec;14(4):507-512. doi: 10.1007/s12200-021-1216-2. Epub 2021 Jun 7.

Authors

Jiahui Hu¹, Feng Wu¹, Jiangnan Dai¹, Changqing Chen²

Affiliations

¹ Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
² Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China. [email protected].

Abstract

Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM.

Keywords: light-emitting diode (LED); metal-organic chemical vapor deposition (MOCVD); physical vapor deposition (PVD); sputtered aluminum nitride (AlN).