The toxicity of lead-based halide perovskites hampers broad application in optoelectronics. The lead-free perovskite Cs2AgBiBr6 is considered a promising candidate, owing to its long carrier lifetime and outstanding stability. However, the relatively large bandgap hinders its absorption in the visible region and thus the application of its photoelectric properties in the visible and near-infrared (NIR) regions. Therefore, the expansion of absorption to the longer wavelengths, even the NIR region, makes sense for solar cells and photodetector applications. Facile elemental doping or substitution of Cs2AgBiBr6 makes it potentially desirable for applications in both visible and NIR regions. As a result, band-edge adjustment to expand the absorption onset or trace deep-energy-level doping with a new intermediate band was achieved. Here, we summarize the elemental doping results and review the potential application of Cs2AgBiBr6 from these two aspects and give constructive perspectives for further development of lead-free perovskite.