Developing fatigue-resistant ferroelectrics using interlayer sliding switching

Renji Bian; Ri He; Er Pan; Zefen Li; Guiming Cao; Peng Meng; Jiangang Chen; Qing Liu; Zhicheng Zhong; Wenwu Li; Fucai Liu

doi:10.1126/science.ado1744

Developing fatigue-resistant ferroelectrics using interlayer sliding switching

Science. 2024 Jul 5;385(6704):57-62. doi: 10.1126/science.ado1744. Epub 2024 Jun 6.

Authors

Renji Bian^#^{1

2}, Ri He^#³, Er Pan^#¹, Zefen Li^#¹, Guiming Cao^{4

5}, Peng Meng¹, Jiangang Chen¹, Qing Liu¹, Zhicheng Zhong^{3

6

7}, Wenwu Li^{8

9}, Fucai Liu^{1

2

10}

Affiliations

¹ School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
² Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
³ Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
⁴ School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China.
⁵ Key Laboratory of Liangshan Agriculture Digital Transformation of Sichuan Provincial Education Department, Xi Chang University, Xi Chang 615013, China.
⁶ Department of Physics, University of Science and Technology of China, Hefei 230026, China.
⁷ Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China.
⁸ Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China.
⁹ State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai 200433, China.
¹⁰ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.

^# Contributed equally.

PMID: 38843352
DOI: 10.1126/science.ado1744

Abstract

Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS₂). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 10⁶ switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 10⁵ s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.