Substrate-induced strain in molybdenum disulfide grown by aerosol-assisted chemical vapor deposition

Transition metal dichalcogenides have been extensively studied in recent years because of their fascinating optical, electrical, and catalytic properties. However, low-cost, scalable production remains a challenge. Aerosol-assisted chemical vapor deposition (AACVD) provides a new method for scalable thin film growth. In this study, we demonstrate the growth of molybdenum disulfide (MoS₂) thin films using AACVD method. This method proves its suitability for low-temperature growth of MoS₂thin films on various substrates, such as glass, silicon dioxide, quartz, silicon, hexagonal boron nitride, and highly ordered pyrolytic graphite. The as-grown MoS₂shows evidence of substrate-induced strain. The type of strain and the morphology of the as-grown MoS₂highly depend on the growth substrate's surface roughness, crystallinity, and chemical reactivity. Moreover, the as-grown MoS₂shows the presence of both direct and indirect band gaps, suitable for exploitation in future electronics and optoelectronics.