Utilizing Domain Engineering to Achieve High-Polarization Relaxor Ferroelectrics for Low-Consumption Ceramic Capacitors

Zixiong Sun; Liming Diwu; Yongming Hu; Shibo Zhao; Jingru Xu; Ting Wang; Yongping Pu; Zhuo Wang

doi:10.1021/acs.inorgchem.4c02385

Utilizing Domain Engineering to Achieve High-Polarization Relaxor Ferroelectrics for Low-Consumption Ceramic Capacitors

Inorg Chem. 2024 Aug 5;63(31):14301-14307. doi: 10.1021/acs.inorgchem.4c02385. Epub 2024 Jul 23.

Authors

Zixiong Sun^{1

2

3

4}, Liming Diwu¹, Yongming Hu², Shibo Zhao¹, Jingru Xu¹, Ting Wang³, Yongping Pu⁴, Zhuo Wang⁴

Affiliations

¹ School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, PR China.
² Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, Hubei University, Wuhan 430062, PR China.
³ Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, PR China.
⁴ School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an 710021, PR China.

PMID: 39041592
DOI: 10.1021/acs.inorgchem.4c02385

Abstract

This study focuses on incorporating NaNbO₃ (NN) into the Ba_0.85Ca_0.15Zr_0.9Ti_0.1O₃ (BCZT) lattice to form (1 - x)BCZT-xNN ceramics. Although antiferroelectricity was not observed, an observed domain-movement-diminishment behavior with increasing NN dopant induced the formation of high polarization walls (HPWs) between adjacent C-phases. The 0.90BCZT-0.10NN composition exhibited superior polarization compared to most BCZT-based ferroelectrics, as validated by mathematical derivation. Integration of these findings revealed a W_rec of 3.86 J/cm³ at 360 kV/cm, with a high W_rec/E_b ratio defining energy consumption efficiency in dielectric capacitors. This work introduces a novel approach to fabricating low-consumption dielectric capacitors. Additionally, a significantly high W_rec of 5.36 J/cm³ was achieved with an NN dopant concentration of 0.30.