Solar power conversion: CuI hole transport layer and Ba3NCl3 absorber enable advanced solar cell technology boosting efficiency over 30

Avijit Ghosh; Abdullah Al Hossain Newaz; Abdullah Al Baki; Nasser S Awwad; Hala A Ibrahium; Mohammad Shakhawat Hossain; Md Muminur Rahman Sonic; Md Saiful Islam; Md Khaledur Rahman

doi:10.1039/d4ra03695f

Solar power conversion: CuI hole transport layer and Ba₃NCl₃ absorber enable advanced solar cell technology boosting efficiency over 30

RSC Adv. 2024 Aug 1;14(33):24066-24081. doi: 10.1039/d4ra03695f. eCollection 2024 Jul 26.

Authors

Avijit Ghosh¹, Abdullah Al Hossain Newaz², Abdullah Al Baki³, Nasser S Awwad⁴, Hala A Ibrahium⁵, Mohammad Shakhawat Hossain³, Md Muminur Rahman Sonic³, Md Saiful Islam³, Md Khaledur Rahman³

Affiliations

¹ Department of Electrical and Electronic Engineering, Begum Rokeya University Rangpur 5400 Bangladesh [email protected].
² Department of Mechanical Engineering, University of Bridgeport Bridgeport Connecticut 06604 USA.
³ Department of Electrical and Computer Engineering, Lamar University Beaumont TX 77710 USA.
⁴ Department of Chemistry, Faculty of Science, King Khalid University PO Box 9004 Abha 61413 Saudi Arabia.
⁵ Department of Biology, Faculty of Science, King Khalid University PO Box 9004 Abha 61413 Saudi Arabia.

Abstract

Researchers are becoming more interested in novel barium-nitride-chloride (Ba₃NCl₃) hybrid perovskite solar cells (HPSCs) due to their remarkable semiconductor properties. An electron transport layer (ETL) built from TiO₂ and a hole transport layer (HTL) made of CuI have been studied in Ba₃NCl₃-based single junction photovoltaic cells in a variety of variations. Through extensive numerical analysis using SCAPS-1D simulation software, we investigated elements such as layer thickness, defect density, doping concentration, interface defect density, carrier concentration, generation, recombination, temperature, series and shunt resistance, open circuit voltage (V _OC), short circuit current (J _SC), fill factor (FF), and power conversion efficiency (PCE). The study found that the HTL CuI design reached the highest PCE at 30.47% with a V _OC of 1.0649 V, a J _SC of 38.2609 mA cm^-2, and an FF of 74.78%. These findings offer useful data and a practical plan for producing inexpensive, Ba₃NCl₃-based thin-film solar cells.